AM28F020AM28F020, Książki, polskie, elektronika i elektrotechnika, Układy scalone - baza, Uklady scalone baza, Baza
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FINAL Am28F020 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS n n Latch-up protected to 100 mA from –1 V to V CC +1 V High performance — Access times as fast as 70 ns n Flasherase Electrical Bulk Chip Erase — One second typical chip erase time n CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption n Flashrite Programming — 10 µs typical byte program time — 4 s typical chip program time n Command register architecture for microprocessor/microcontroller compatible write interface n Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP n On-chip address and data latches n Advanced CMOS flash memory technology — Low cost single transistor memory cell n 10,000 write/erase cycles minimum n Automatic write/erase pulse stop timer n Write and erase voltage 12.0 V ± 5% GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory orga- nized as 256 Kbytes of 8 bits each. AMD’s Flash mem- ories offer the most cost-effective and reliable read/ write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F020 is erased when shipped from the factory. 5% V PP supply input to perform the Flasherase and Flashrite functions. The highest degree of latch-up protection is achieved with AMD’s proprietary non-epi process. Latch-up pro- tection is provided for stresses up to 100 mA on address and data pins from –1 V to V CC +1 V. The Am28F020 is byte programmable using 10 µs programming pulses in accordance with AMD’s Flashrite programming algorithm. The typical room temperature programming time of the Am28F020 is four seconds. The entire chip is bulk erased using 10 ms erase pulses according to AMD’s Flasherase algorithm. Typical erasure at room temperature is accomplished in less than one second. The windowed package and the 15–20 minutes required for EPROM erasure using ultraviolet light are eliminated. Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine, which controls the erase and programming circuitry. During write cycles, the command register internally latches ± The standard Am28F020 offers access times of as fast as 70 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus conten- tion, the device has separate chip enable (CE#) and output enable (OE#) controls. AMD’s Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The Am28F020 uses a command register to manage this functionality, while maintaining a JEDEC-standard 32- pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. AMD’s Flash technology reliably stores memory con- tents even after 10,000 erase and program cycles. The AMD cell is designed to optimize the erase and pro- Publication# 14727 Rev: F Amendment/ +2 Issue Date: January 1998 gramming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The Am28F020 uses a 12.0 addresses and data needed for the programming and erase operations. For system design simplification, the Am28F020 is designed to support either WE# or CE# controlled writes. During a system write cycle, addresses are latched on the falling edge of WE# or CE#, whichever occurs last. Data is latched on the rising edge of WE# or CE#, whichever occurs first. To simplify discussion, the WE# pin is used as the write cycle control pin throughout the rest of this data sheet. All setup and hold times are with respect to the WE# signal. AMD’s Flash technology combines years of EPROM and EEPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The Am28F020 electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are pro- grammed one byte at a time using the EPROM programming mechanism of hot electron injection. PRODUCT SELECTOR GUIDE Family Part Number Am28F020 Speed Options (V CC = 5.0 V ± 10%) -70 -90 -120 -150 -200 Max Access Time (ns) 70 90 120 150 200 CE # (E # ) Access (ns) 70 90 120 150 200 OE # (G # ) Access (ns) 35 35 50 55 55 BLOCK DIAGRAM DQ0–DQ7 V CC V SS V PP Erase Voltage Switch Input/Output Buffers To Array WE# State Control Command Register Program Voltage S witch Chip Enable Output Enable Logic CE# OE# Data Latch Program/Erase Pulse Timer Y-Decoder Y-Gating Low V CC Detector X-Decoder 2,097,152 Bit Cell Matrix A0–A17 14727F-1 2 Am28F020 CONNECTION DIAGRAMS PDIP PLCC V PP 1 32 V CC A16 2 31 WE # (W # ) A15 3 30 A17 A12 4 29 A14 A7 5 28 A13 A8 A9 A11 OE # (G # ) A10 CE # (E # ) DQ7 4 3 1 32 31 30 2 A6 6 27 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13 A14 A13 A8 A9 A11 OE# (G#) A10 CE# (E#) DQ7 29 28 27 26 25 24 23 22 21 A5 7 26 A4 A3 A2 8 25 9 24 10 23 A1 A0 11 12 22 21 DQ0 13 20 19 DQ6 DQ5 DQ4 DQ3 DQ1 DQ2 V SS 14 14 15 16 17 18 19 20 15 16 18 17 14727F-2 14727F-3 Note : Pin 1 is marked for orientation. Am28F020 3 CONNECTION DIAGRAMS (continued) TSOP A11 A9 A8 A13 A14 A17 WE # V CC V PP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE # A10 CE # D7 D6 D5 D4 D3 V SS D2 D1 D0 A0 A1 A2 A3 32-Pin TSOP—Standard Pinout OE # A10 CE # D7 D6 D5 D4 D3 V SS D2 D1 D0 A0 A1 A2 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 A17 WE # V CC V PP A16 A15 A12 A7 A6 A5 A4 32-Pin TSOP—Reverse Pinout 14727F-4 LOGIC SYMBOL 18 A0–A17 8 DQ0–DQ7 CE # (E) OE# (G#) WE# (W#) 14727F-5 4 Am28F020 ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The ordering number (Valid Combination) is formed by a combination of the following: AM28F020 -70 J C B OPTIONAL PROCESSING Blank = Standard Processing B = Burn-In Contact an AMD representative for more information. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) PACKAGE TYPE P = 32-Pin Plastic DIP (PD 032) J = 32-Pin Rectangular Plastic Leaded Chip Carrier (PL 032) E = 32-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 032) F = 32-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR032) SPEED OPTION See Product Selector Guide and Valid Combinations DEVICE NUMBER/DESCRIPTION Am28F020 2 Megabit (256 K x 8-Bit) CMOS Flash Memory Valid Combinations Valid Combinations Valid Combinations list configurations planned to be support- ed in volume for this device. Consult the local AMD sales of- fice to confirm availability of specific valid combinations and to check on newly released combinations. AM28F020-70 AM28F020-90 PC, PI, PE, JC, JI, JE, EC, EI, EE, FC, FI, FE AM28F020-120 AM28F020-150 AM28F020-200 Am28F020 5 [ Pobierz całość w formacie PDF ] |
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