APM3054NtAPM3054Nt, ELEKTRONIKA, Dane elementów elektronicznych
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APM3054N N-Channel Enhancement Mode MOSFET Features Pin Description 30V/15A, R DS(ON) =48m (typ.) @ V GS =10V R DS(ON) =75m (typ.) @ V GS =4.5V Super High Dense Cell Design High Power and Current Handling Capability 1 2 3 1 2 3 TO-252 and SOT-223 Package G D S G DS Top View of TO-252 Top View of SOT-223 Applications 1 2 3 Switching Regulators Switching Converters GD S Top View of SOT-89 Ordering and Marking Information APM3054N Package Code D : SO T-89 U : TO -252 V : SO T-223 Operating Junction Temp. Range C : -55 to 125 C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM3054N U : APM3054N XXXXX XXXXX - Date Code APM3054N D/V : APM3054N XXXXX XXXXX - Date Code Absolute Maximum Ratings (T A = 25 ° C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ±20 I D Maximum Drain Current – Continuous 15 A I DM Maximum Drain Current – Pulsed 30 I S Diode Continuous Forward Current 8 A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw •• •• •• Copyright APM3054N Absolute Maximum Ratings (Cont.) (T A = 25 ° C unless otherwise noted) Symbol Parameter Rating Unit I SM Diode Maximum Pulse Current 32 A TO-252 62.5 T A =25°C W SOT-223 3 P D Maximum Power Dissipation TO-252 25 T A =100°C W SOT-223 1.2 T J Maximum Junction Temperature 150 °C T STG Storage Temperature Range -55 to 150 °C Electrical Characteristics (T A = 25 ° C unless otherwise noted) Symbol Parameter Test Condition APM3054 N Unit Min. Typ. Max. Static BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250 A 30 V I DSS Zero Gate Voltage Drain Current V DS =24V, V GS =0V 1 A V GS(th) Gate Threshold Voltage V DS =V GS , I DS =250 A 1 3 V I GSS Gate Leakage Current V GS = 20V, V DS =0V 100 nA R DS(ON) Drain-Source On-state Resistance V GS =10V, I DS =12A 48 54 m V GS =4.5V, I DS =6A 75 90 V SD Diode Forward Voltage I SD =8A, V GS =0V 0.6 1.3 V Dynamic Q g Total Gate Charge 9 V DS =15V, V GS =5V, I DS =10A Q gs Gate-Source Charge 5.4 nC Q gd Gate-Drain Charge 2.4 t d(ON) Turn-on Delay Time 11 t r Turn-on Rise Time V DD =15V,I D =2A, V GS =10V, R G =6 17 ns t d(OFF) Turn-off Delay Time 37 t f Turn-off Fall Time 20 C iss Input Capacitance V GS =0V V DS =25V Frequency=1.0MHz 400 C oss Output Capacitance 75 pF C rss Reverse Transfer 45 ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 2 www.anpec.com.tw Copyright APM3054N Typical Characteristics Output Characteristics Transfer Characteristics 20 25 V GS =6,7,8,9,10V T J =-55°C 20 15 T J =25°C V GS =5V T J =125°C 15 10 10 V GS =4V 5 5 V GS =3V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Threshold Voltage vs. Temperature On-Resistance vs. Drain Current 1.2 0.12 I DS =250uA 1.1 0.10 V GS =4.5V 1.0 0.08 0.9 0.06 V GS =10V 0.8 0.04 0.7 0.02 0.6 0.00 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 Tj - Junction Temperature (°C) I D - Drain Current (A) ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 3 www.anpec.com.tw Copyright APM3054N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.35 0.10 V GS =10V I D =12A I D =6A 0.09 0.30 0.08 0.25 0.07 0.20 0.06 0.05 0.15 0.04 0.10 0.03 0.02 0.05 0.01 0.00 234567890 0.00 -50 -25 0 25 50 75 100 125 150 V GS - Gate-to-Source Voltage (V) T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 0.10 V GS =10V I DS =12A 10 V DS =15V I DS =10A 0.09 0.08 8 0.07 0.06 6 0.05 0.04 4 0.03 0.02 2 0.01 0.00 -50 -25 0 25 50 75 100 125 150 0 2.5 5.0 7.5 10.0 12.5 15.0 T J - Junction Temperature (°C) Q G - Gate Charge (nC) ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 4 www.anpec.com.tw Copyright APM3054N Typical Characteristics Capacitance Source-Drain Diode Forward Voltage 750 30 625 500 10 Ciss 375 250 125 Coss T J =150°C T J =25°C Crss 0 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V DS - Drain-to-Source Voltage (V) V SD -Source-to-Drain Voltage (V) Single Pulse Power Single Pulse Power TO-252 SOT-223 250 140 120 200 100 150 80 100 60 40 50 20 1E-3 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Time (sec) Time (sec) ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 5 www.anpec.com.tw 1 0 0 Copyright [ Pobierz całość w formacie PDF ] |
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